Vishay Semiconductor Diodes Division - BAQ133-GS18

KEY Part #: K6458547

BAQ133-GS18 Pricing (USD) [2202576PC Stock]

  • 1 pcs$0.01679
  • 10,000 pcs$0.01553

Nimewo Pati:
BAQ133-GS18
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 30V 200MA SOD80. Diodes - General Purpose, Power, Switching 40 Volt 200mA 2.0 Amp IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - Rèkteur - Arrays, Tiristors - SCR - Modil yo, Tiristors - SCR, Diodes - Zener - Arrays, Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BAQ133-GS18 electronic components. BAQ133-GS18 can be shipped within 24 hours after order. If you have any demands for BAQ133-GS18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAQ133-GS18 Atribi pwodwi yo

Nimewo Pati : BAQ133-GS18
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 30V 200MA SOD80
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 30V
Kouran - Mwayèn Rèktifye (Io) : 200mA
Voltage - Forward (Vf) (Max) @ Si : 1V @ 100mA
Vitès : Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 1nA @ 15V
Kapasite @ Vr, F : 3pF @ 0V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : SOD-80 Variant
Pake Aparèy Founisè : SOD-80 QuadroMELF
Operating Tanperati - Junction : -65°C ~ 175°C

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