Vishay Siliconix - IRFIZ14G

KEY Part #: K6414148

[12855PC Stock]


    Nimewo Pati:
    IRFIZ14G
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET N-CH 60V 8A TO220FP.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Diodes - RF, Transistors - JFETs, Diodes - Zener - Single, Diodes - Rèkteur - Arrays and Transistors - FETs, MOSFETs - Arrays ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix IRFIZ14G electronic components. IRFIZ14G can be shipped within 24 hours after order. If you have any demands for IRFIZ14G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRFIZ14G Atribi pwodwi yo

    Nimewo Pati : IRFIZ14G
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET N-CH 60V 8A TO220FP
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 60V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 200 mOhm @ 4.8A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 11nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 300pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 27W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-220-3
    Pake / Ka : TO-220-3 Full Pack, Isolated Tab