STMicroelectronics - STGB10M65DF2

KEY Part #: K6422331

STGB10M65DF2 Pricing (USD) [60589PC Stock]

  • 1 pcs$0.64856
  • 1,000 pcs$0.64534
  • 2,000 pcs$0.61461

Nimewo Pati:
STGB10M65DF2
Manifakti:
STMicroelectronics
Detaye deskripsyon:
IGBT 650V 10A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Modil pouvwa chofè, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Single, Tiristors - SCR - Modil yo, Transistors - Objektif espesyal and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in STMicroelectronics STGB10M65DF2 electronic components. STGB10M65DF2 can be shipped within 24 hours after order. If you have any demands for STGB10M65DF2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STGB10M65DF2 Atribi pwodwi yo

Nimewo Pati : STGB10M65DF2
Manifakti : STMicroelectronics
Deskripsyon : IGBT 650V 10A D2PAK
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 650V
Kouran - Pèseptè (Ic) (Max) : 20A
Kouran - Pèseptè batman (Icm) : 40A
Vce (sou) (Max) @ Vge, Ic : 2V @ 15V, 10A
Pouvwa - Max : 115W
Oblije chanje enèji : 120µJ (on), 270µJ (off)
Kalite Antre : Standard
Gate chaje : 28nC
Td (on / off) @ 25 ° C : 19ns/91ns
Kondisyon egzamen an : 400V, 10A, 22 Ohm, 15V
Ranvèse Tan Reverse (trr) : 96ns
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè : D2PAK