JAN1N6628US Pricing (USD) [4373PC Stock]
- 1 pcs$9.95367
- 100 pcs$9.90415
- Nimewo Pati:
- JAN1N6628US
- Manifakti:
- Microsemi Corporation
- Detaye deskripsyon:
- DIODE GEN PURP 660V 1.75A D5B. Rectifiers Rectifier
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - IGBTs - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Single and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Microsemi Corporation JAN1N6628US electronic components. JAN1N6628US can be shipped within 24 hours after order. If you have any demands for JAN1N6628US, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
JAN1N6628US Atribi pwodwi yo
Nimewo Pati :
JAN1N6628US
Manifakti :
Microsemi Corporation
Deskripsyon :
DIODE GEN PURP 660V 1.75A D5B
Seri :
Military, MIL-PRF-19500/590
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
660V
Kouran - Mwayèn Rèktifye (Io) :
1.75A
Voltage - Forward (Vf) (Max) @ Si :
1.35V @ 2A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
30ns
Kouran - Fèy Reverse @ Vr :
2µA @ 660V
Kapasite @ Vr, F :
40pF @ 10V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
E-MELF
Pake Aparèy Founisè :
D-5B
Operating Tanperati - Junction :
-65°C ~ 150°C
Ou ka enterese tou
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C4D08120E
Cree/Wolfspeed
DIODE SCHOTTKY 1.2KV 8A TO252-2. Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 7.5A
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