Toshiba Semiconductor and Storage - CBS10S30,L3F

KEY Part #: K6428492

CBS10S30,L3F Pricing (USD) [1461272PC Stock]

  • 1 pcs$0.02671
  • 10,000 pcs$0.02658
  • 30,000 pcs$0.02492
  • 50,000 pcs$0.02215

Nimewo Pati:
CBS10S30,L3F
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
DIODE SCHOTTKY 20V 1A CST2B. Schottky Diodes & Rectifiers Sm signal Schottky diode
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Transistors - JFETs, Tiristors - DIACs, SIDACs, Diodes - RF, Transistors - Bipolè (BJT) - Arrays and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage CBS10S30,L3F electronic components. CBS10S30,L3F can be shipped within 24 hours after order. If you have any demands for CBS10S30,L3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CBS10S30,L3F Atribi pwodwi yo

Nimewo Pati : CBS10S30,L3F
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : DIODE SCHOTTKY 20V 1A CST2B
Seri : -
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 20V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 450mV @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 500µA @ 30V
Kapasite @ Vr, F : 135pF @ 0V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : 2-SMD, No Lead
Pake Aparèy Founisè : CST2B
Operating Tanperati - Junction : 125°C (Max)

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