1N5407G-T Pricing (USD) [293PC Stock]
- 1,200 pcs$0.03002
- 2,400 pcs$0.02610
- 6,000 pcs$0.02349
- 12,000 pcs$0.02088
- 30,000 pcs$0.01958
- 60,000 pcs$0.01736
- Nimewo Pati:
- 1N5407G-T
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- DIODE GEN PURP 800V 3A DO201AD. Rectifiers 3.0A 800V
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Tiristors - SCR and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated 1N5407G-T electronic components. 1N5407G-T can be shipped within 24 hours after order. If you have any demands for 1N5407G-T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N5407G-T Atribi pwodwi yo
Nimewo Pati :
1N5407G-T
Manifakti :
Diodes Incorporated
Deskripsyon :
DIODE GEN PURP 800V 3A DO201AD
Seri :
-
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
800V
Kouran - Mwayèn Rèktifye (Io) :
3A
Voltage - Forward (Vf) (Max) @ Si :
1.1V @ 3A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
2µs
Kouran - Fèy Reverse @ Vr :
5µA @ 800V
Kapasite @ Vr, F :
40pF @ 4V, 1MHz
Mounting Kalite :
Through Hole
Pake / Ka :
DO-201AD, Axial
Pake Aparèy Founisè :
DO-201AD
Operating Tanperati - Junction :
-65°C ~ 150°C
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