Vishay Siliconix - SIS892DN-T1-GE3

KEY Part #: K6419667

SIS892DN-T1-GE3 Pricing (USD) [123967PC Stock]

  • 1 pcs$0.29837
  • 3,000 pcs$0.28017

Nimewo Pati:
SIS892DN-T1-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 100V 30A 1212-8 PPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Modil pouvwa chofè, Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors) and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SIS892DN-T1-GE3 electronic components. SIS892DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS892DN-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIS892DN-T1-GE3 Atribi pwodwi yo

Nimewo Pati : SIS892DN-T1-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 100V 30A 1212-8 PPAK
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 30A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 29 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 21.5nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 611pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.7W (Ta), 52W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerPAK® 1212-8
Pake / Ka : PowerPAK® 1212-8