Infineon Technologies - IRLR3636TRLPBF

KEY Part #: K6419602

IRLR3636TRLPBF Pricing (USD) [120807PC Stock]

  • 1 pcs$0.30617
  • 3,000 pcs$0.25477

Nimewo Pati:
IRLR3636TRLPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 60V 50A DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Pwogramasyon Unijunction, Diodes - RF, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - RF, Diodes - Varyab kapasite (Varicaps, Varactors) and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRLR3636TRLPBF Atribi pwodwi yo

Nimewo Pati : IRLR3636TRLPBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 60V 50A DPAK
Seri : HEXFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 50A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 6.8 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs : 49nC @ 4.5V
Vgs (Max) : ±16V
Antre kapasite (Ciss) (Max) @ Vds : 3779pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 143W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D-Pak
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63