[13798PC Stock]
- Nimewo Pati:
- TPCF8104(TE85L,F,M
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET P-CH 30V 6A VS-8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - TRIACs, Transistors - IGBTs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Single and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TPCF8104(TE85L,F,M electronic components. TPCF8104(TE85L,F,M can be shipped within 24 hours after order. If you have any demands for TPCF8104(TE85L,F,M, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPCF8104(TE85L,F,M Atribi pwodwi yo
Nimewo Pati :
TPCF8104(TE85L,F,M
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET P-CH 30V 6A VS-8
Seri :
U-MOSIV
Estati Pati :
Discontinued at Digi-Key
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
28 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
34nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1760pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
700mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
VS-8 (2.9x1.5)
Pake / Ka :
8-SMD, Flat Lead
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