Toshiba Semiconductor and Storage - TPCF8104(TE85L,F,M

KEY Part #: K6411417

[13798PC Stock]


    Nimewo Pati:
    TPCF8104(TE85L,F,M
    Manifakti:
    Toshiba Semiconductor and Storage
    Detaye deskripsyon:
    MOSFET P-CH 30V 6A VS-8.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Single, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Arrays, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - RF and Diodes - RF ...
    Avantaj konpetitif:
    We specialize in Toshiba Semiconductor and Storage TPCF8104(TE85L,F,M electronic components. TPCF8104(TE85L,F,M can be shipped within 24 hours after order. If you have any demands for TPCF8104(TE85L,F,M, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    TPCF8104(TE85L,F,M Atribi pwodwi yo

    Nimewo Pati : TPCF8104(TE85L,F,M
    Manifakti : Toshiba Semiconductor and Storage
    Deskripsyon : MOSFET P-CH 30V 6A VS-8
    Seri : U-MOSIV
    Estati Pati : Discontinued at Digi-Key
    FET Kalite : P-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 28 mOhm @ 3A, 10V
    Vgs (th) (Max) @ Id : 2V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : 34nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 1760pF @ 10V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 700mW (Ta)
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : VS-8 (2.9x1.5)
    Pake / Ka : 8-SMD, Flat Lead