[13223PC Stock]
- Nimewo Pati:
- SI5435BDC-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET P-CH 30V 4.3A 1206-8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Arrays, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI5435BDC-T1-GE3 electronic components. SI5435BDC-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI5435BDC-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI5435BDC-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SI5435BDC-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 30V 4.3A 1206-8
Seri :
TrenchFET®
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
45 mOhm @ 4.3A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
24nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
-
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.3W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
1206-8 ChipFET™
Pake / Ka :
8-SMD, Flat Lead
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