Nimewo Pati :
IPD90N10S4L06ATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH TO252-3
Seri :
Automotive, AEC-Q101, OptiMOS™
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
90A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
6.6 mOhm @ 90A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 90µA
Chaje Gate (Qg) (Max) @ Vgs :
98nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
6250pF @ 25V
Disipasyon Pouvwa (Max) :
136W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TO252-3-313
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63