Nimewo Pati :
FDFMA2P853T
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET P-CH 20V 3A 6-MICROFET
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
120 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id :
1.3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
6nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
435pF @ 10V
Karakteristik FET :
Schottky Diode (Isolated)
Disipasyon Pouvwa (Max) :
1.4W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
MicroFET 2x2 Thin
Pake / Ka :
6-UDFN Exposed Pad