SBRT4M30LP-7 Pricing (USD) [355350PC Stock]
- 1 pcs$0.10461
- 3,000 pcs$0.10409
- 6,000 pcs$0.09691
- 15,000 pcs$0.09332
- Nimewo Pati:
- SBRT4M30LP-7
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- DIODE SBR 30V 4A 8DFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - JFETs, Diodes - RF, Diodes - Rèkteur - Single, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated SBRT4M30LP-7 electronic components. SBRT4M30LP-7 can be shipped within 24 hours after order. If you have any demands for SBRT4M30LP-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SBRT4M30LP-7 Atribi pwodwi yo
Nimewo Pati :
SBRT4M30LP-7
Manifakti :
Diodes Incorporated
Deskripsyon :
DIODE SBR 30V 4A 8DFN
Seri :
TrenchSBR
Estati Pati :
Active
Kalite dyòd :
Super Barrier
Voltage - DC Ranvèse (Vr) (Max) :
30V
Kouran - Mwayèn Rèktifye (Io) :
4A
Voltage - Forward (Vf) (Max) @ Si :
510mV @ 4A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
30ns
Kouran - Fèy Reverse @ Vr :
60µA @ 30V
Kapasite @ Vr, F :
150pF @ 30V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
8-PowerUDFN
Pake Aparèy Founisè :
U-DFN3030-8
Operating Tanperati - Junction :
-55°C ~ 150°C
Dènye nouvèl
Ou ka enterese tou
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CRS03(TE85L,Q,M)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 1A SFLAT. Schottky Diodes & Rectifiers SBD 1A VRRM=30V VFM=0.45V
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