Taiwan Semiconductor Corporation - S3MHR7G

KEY Part #: K6439717

S3MHR7G Pricing (USD) [619838PC Stock]

  • 1 pcs$0.05967

Nimewo Pati:
S3MHR7G
Manifakti:
Taiwan Semiconductor Corporation
Detaye deskripsyon:
DIODE GEN PURP 3A DO214AB. Rectifiers 3A, 1000V, GLASS PASSIVATED SMD RECTIFIER
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - TRIACs, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Single and Diodes - RF ...
Avantaj konpetitif:
We specialize in Taiwan Semiconductor Corporation S3MHR7G electronic components. S3MHR7G can be shipped within 24 hours after order. If you have any demands for S3MHR7G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S3MHR7G Atribi pwodwi yo

Nimewo Pati : S3MHR7G
Manifakti : Taiwan Semiconductor Corporation
Deskripsyon : DIODE GEN PURP 3A DO214AB
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : -
Kouran - Mwayèn Rèktifye (Io) : 3A
Voltage - Forward (Vf) (Max) @ Si : 1.15V @ 3A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 1.5µs
Kouran - Fèy Reverse @ Vr : 5µA @ 1000V
Kapasite @ Vr, F : 30pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AB, SMC
Pake Aparèy Founisè : DO-214AB (SMC)
Operating Tanperati - Junction : -55°C ~ 150°C

Ou ka enterese tou
  • VS-6EWL06FN-M3

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 6A TO252AA. Rectifiers 6A 600V 59ns Ultrafast

  • BYG22D-M3/TR

    Vishay Semiconductor Diodes Division

    DIODE AVALANCHE 200V 2A DO214AC. Rectifiers 2A,200V,25nS UF Fast Avalanche,SMD

  • BYG22B-E3/TR3

    Vishay Semiconductor Diodes Division

    DIODE AVALANCHE 100V 2A DO214AC. Rectifiers 2.0 Amp 100 Volt

  • BYG10G-M3/TR3

    Vishay Semiconductor Diodes Division

    DIODE AVALANCHE 400V 1.5A. Rectifiers 1.5A,400V VGSC-STD Avalanche SMD

  • BYG10J-M3/TR

    Vishay Semiconductor Diodes Division

    DIODE AVALANCHE 600V 1.5A. Rectifiers 1.5A,600V VGSC-STD Avalanche SMD

  • BYG10M-M3/TR

    Vishay Semiconductor Diodes Division

    DIODE AVALANCHE 1KV 1.5A. Rectifiers 1.5A,1000V VGSC-STD Avalanche SMD