Vishay Semiconductor Diodes Division - 1N4150W-E3-08

KEY Part #: K6455777

1N4150W-E3-08 Pricing (USD) [1945524PC Stock]

  • 1 pcs$0.10678
  • 10 pcs$0.08741
  • 25 pcs$0.07309
  • 100 pcs$0.04631
  • 250 pcs$0.03575
  • 500 pcs$0.03048
  • 1,000 pcs$0.02072

Nimewo Pati:
1N4150W-E3-08
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 50V 200MA SOD123. Diodes - General Purpose, Power, Switching 50 Volt 500mA 4ns
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Modil pouvwa chofè, Tiristors - DIACs, SIDACs and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division 1N4150W-E3-08 electronic components. 1N4150W-E3-08 can be shipped within 24 hours after order. If you have any demands for 1N4150W-E3-08, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N4150W-E3-08 Atribi pwodwi yo

Nimewo Pati : 1N4150W-E3-08
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 50V 200MA SOD123
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 50V
Kouran - Mwayèn Rèktifye (Io) : 200mA
Voltage - Forward (Vf) (Max) @ Si : 1V @ 200mA
Vitès : Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) : 4ns
Kouran - Fèy Reverse @ Vr : 100nA @ 50V
Kapasite @ Vr, F : 2.5pF @ 0V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : SOD-123
Pake Aparèy Founisè : SOD-123
Operating Tanperati - Junction : 150°C (Max)

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