FD200R12KE3HOSA1 Pricing (USD) [992PC Stock]
- 1 pcs$46.80541
- Nimewo Pati:
- FD200R12KE3HOSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- IGBT MODULE VCES 1200V 200A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Single, Tiristors - SCR, Transistors - JFETs, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - RF and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies FD200R12KE3HOSA1 electronic components. FD200R12KE3HOSA1 can be shipped within 24 hours after order. If you have any demands for FD200R12KE3HOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FD200R12KE3HOSA1 Atribi pwodwi yo
Nimewo Pati :
FD200R12KE3HOSA1
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT MODULE VCES 1200V 200A
Seri :
-
Estati Pati :
Active
Kalite IGBT :
Trench Field Stop
Nou konte genyen :
Single Chopper
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
-
Pouvwa - Max :
1050W
Vce (sou) (Max) @ Vge, Ic :
2.15V @ 15V, 200A
Kouran - Cutoff Pèseptè (Max) :
5mA
Antre kapasite (Cies) @ Vce :
14nF @ 25V
Antre :
Standard
NTC thermistor :
No
Operating Tanperati :
-40°C ~ 125°C
Mounting Kalite :
Chassis Mount
Pake / Ka :
Module
Pake Aparèy Founisè :
Module
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