[12956PC Stock]
- Nimewo Pati:
- NTHS2101PT1
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET P-CH 8V 5.4A CHIPFET.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Arrays, Diodes - Bridge rèktifikateur, Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Diodes - Varyab kapasite (Varicaps, Varactors) and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor NTHS2101PT1 electronic components. NTHS2101PT1 can be shipped within 24 hours after order. If you have any demands for NTHS2101PT1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NTHS2101PT1 Atribi pwodwi yo
Nimewo Pati :
NTHS2101PT1
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET P-CH 8V 5.4A CHIPFET
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
8V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.4A (Tj)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
25 mOhm @ 5.4A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
30nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
2400pF @ 6.4V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.3W (Ta)
Operating Tanperati :
-
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
ChipFET™
Pake / Ka :
8-SMD, Flat Lead
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