Renesas Electronics America - RJH1CV7DPQ-E0#T2

KEY Part #: K6423699

[9563PC Stock]


    Nimewo Pati:
    RJH1CV7DPQ-E0#T2
    Manifakti:
    Renesas Electronics America
    Detaye deskripsyon:
    IGBT 1200V 70A 320W TO247.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR - Modil yo and Transistors - FETs, MOSFETs - Single ...
    Avantaj konpetitif:
    We specialize in Renesas Electronics America RJH1CV7DPQ-E0#T2 electronic components. RJH1CV7DPQ-E0#T2 can be shipped within 24 hours after order. If you have any demands for RJH1CV7DPQ-E0#T2, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RJH1CV7DPQ-E0#T2 Atribi pwodwi yo

    Nimewo Pati : RJH1CV7DPQ-E0#T2
    Manifakti : Renesas Electronics America
    Deskripsyon : IGBT 1200V 70A 320W TO247
    Seri : -
    Estati Pati : Last Time Buy
    Kalite IGBT : Trench
    Voltage - Pèseptè ki emèt deba (Max) : 1200V
    Kouran - Pèseptè (Ic) (Max) : 70A
    Kouran - Pèseptè batman (Icm) : -
    Vce (sou) (Max) @ Vge, Ic : 2.3V @ 15V, 35A
    Pouvwa - Max : 320W
    Oblije chanje enèji : 3.2mJ (on), 2.5mJ (off)
    Kalite Antre : Standard
    Gate chaje : 166nC
    Td (on / off) @ 25 ° C : 53ns/185ns
    Kondisyon egzamen an : 600V, 35A, 5 Ohm, 15V
    Ranvèse Tan Reverse (trr) : 200ns
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake / Ka : TO-247-3
    Pake Aparèy Founisè : TO-247