Infineon Technologies - IRG7PH28UD1PBF

KEY Part #: K6423725

[9555PC Stock]


    Nimewo Pati:
    IRG7PH28UD1PBF
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    IGBT 1200V 30A 115W TO247AC.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - JFETs, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Single and Diodes - Zener - Arrays ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IRG7PH28UD1PBF electronic components. IRG7PH28UD1PBF can be shipped within 24 hours after order. If you have any demands for IRG7PH28UD1PBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRG7PH28UD1PBF Atribi pwodwi yo

    Nimewo Pati : IRG7PH28UD1PBF
    Manifakti : Infineon Technologies
    Deskripsyon : IGBT 1200V 30A 115W TO247AC
    Seri : -
    Estati Pati : Obsolete
    Kalite IGBT : Trench
    Voltage - Pèseptè ki emèt deba (Max) : 1200V
    Kouran - Pèseptè (Ic) (Max) : 30A
    Kouran - Pèseptè batman (Icm) : 100A
    Vce (sou) (Max) @ Vge, Ic : 2.3V @ 15V, 15A
    Pouvwa - Max : 115W
    Oblije chanje enèji : 543µJ (off)
    Kalite Antre : Standard
    Gate chaje : 90nC
    Td (on / off) @ 25 ° C : -/229ns
    Kondisyon egzamen an : 600V, 15A, 22 Ohm, 15V
    Ranvèse Tan Reverse (trr) : -
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake / Ka : TO-247-3
    Pake Aparèy Founisè : TO-247AC