Infineon Technologies - BSM200GA120DN2HOSA1

KEY Part #: K6534430

BSM200GA120DN2HOSA1 Pricing (USD) [698PC Stock]

  • 1 pcs$66.54077

Nimewo Pati:
BSM200GA120DN2HOSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT 2 MED POWER 62MM-2.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Transistors - JFETs, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Arrays and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Infineon Technologies BSM200GA120DN2HOSA1 electronic components. BSM200GA120DN2HOSA1 can be shipped within 24 hours after order. If you have any demands for BSM200GA120DN2HOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSM200GA120DN2HOSA1 Atribi pwodwi yo

Nimewo Pati : BSM200GA120DN2HOSA1
Manifakti : Infineon Technologies
Deskripsyon : IGBT 2 MED POWER 62MM-2
Seri : -
Estati Pati : Not For New Designs
Kalite IGBT : -
Nou konte genyen : Single Switch
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 300A
Pouvwa - Max : 1550W
Vce (sou) (Max) @ Vge, Ic : 3V @ 15V, 200A
Kouran - Cutoff Pèseptè (Max) : 4mA
Antre kapasite (Cies) @ Vce : 13nF @ 25V
Antre : Standard
NTC thermistor : No
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : Module
Pake Aparèy Founisè : Module

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