TK31E60W,S1VX Pricing (USD) [15256PC Stock]
- 1 pcs$2.98623
- 50 pcs$2.97138
- Nimewo Pati:
- TK31E60W,S1VX
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N CH 600V 30.8A TO-220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - RF, Tiristors - SCR - Modil yo, Transistors - Pwogramasyon Unijunction, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - JFETs, Transistors - Objektif espesyal and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TK31E60W,S1VX electronic components. TK31E60W,S1VX can be shipped within 24 hours after order. If you have any demands for TK31E60W,S1VX, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK31E60W,S1VX Atribi pwodwi yo
Nimewo Pati :
TK31E60W,S1VX
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N CH 600V 30.8A TO-220
Seri :
DTMOSIV
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
30.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
88 mOhm @ 15.4A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 1.5mA
Chaje Gate (Qg) (Max) @ Vgs :
86nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
3000pF @ 300V
Karakteristik FET :
Super Junction
Disipasyon Pouvwa (Max) :
230W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220
Pake / Ka :
TO-220-3
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