Infineon Technologies - IRF7495PBF

KEY Part #: K6412397

IRF7495PBF Pricing (USD) [13460PC Stock]

  • 1 pcs$0.64387
  • 10 pcs$0.56987
  • 100 pcs$0.45025
  • 500 pcs$0.33031
  • 1,000 pcs$0.26077

Nimewo Pati:
IRF7495PBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 100V 7.3A 8-SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR - Modil yo, Diodes - Rèkteur - Single, Tiristors - SCR, Diodes - Zener - Arrays and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF7495PBF Atribi pwodwi yo

Nimewo Pati : IRF7495PBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 100V 7.3A 8-SOIC
Seri : HEXFET®
Estati Pati : Discontinued at Digi-Key
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7.3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 22 mOhm @ 4.4A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 51nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1530pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-SO
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)