Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CH 1200V 40A TO-247
Teknoloji :
SiCFET (Silicon Carbide)
Drenaj nan Voltage Sous (Vdss) :
1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
40A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
18V
RD sou (Max) @ Id, Vgs :
117 mOhm @ 10A, 18V
Vgs (th) (Max) @ Id :
4V @ 4.4mA
Chaje Gate (Qg) (Max) @ Vgs :
106nC @ 18V
Antre kapasite (Ciss) (Max) @ Vds :
2080pF @ 800V
Disipasyon Pouvwa (Max) :
262W (Tc)
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247