Infineon Technologies - FP150R07N3E4B11BOSA1

KEY Part #: K6533330

FP150R07N3E4B11BOSA1 Pricing (USD) [653PC Stock]

  • 1 pcs$71.10407

Nimewo Pati:
FP150R07N3E4B11BOSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT MODULE VCES 650V 150A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Single, Tiristors - SCR - Modil yo, Tiristors - SCR and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies FP150R07N3E4B11BOSA1 electronic components. FP150R07N3E4B11BOSA1 can be shipped within 24 hours after order. If you have any demands for FP150R07N3E4B11BOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FP150R07N3E4B11BOSA1 Atribi pwodwi yo

Nimewo Pati : FP150R07N3E4B11BOSA1
Manifakti : Infineon Technologies
Deskripsyon : IGBT MODULE VCES 650V 150A
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Nou konte genyen : Three Phase Inverter
Voltage - Pèseptè ki emèt deba (Max) : 650V
Kouran - Pèseptè (Ic) (Max) : 150A
Pouvwa - Max : 430W
Vce (sou) (Max) @ Vge, Ic : 1.95V @ 15V, 150A
Kouran - Cutoff Pèseptè (Max) : 1mA
Antre kapasite (Cies) @ Vce : 9.3nF @ 25V
Antre : Standard
NTC thermistor : Yes
Operating Tanperati : -40°C ~ 150°C
Mounting Kalite : Chassis Mount
Pake / Ka : Module
Pake Aparèy Founisè : Module

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