Infineon Technologies - IRF640NLPBF

KEY Part #: K6401539

IRF640NLPBF Pricing (USD) [45618PC Stock]

  • 1 pcs$0.78185
  • 10 pcs$0.70450
  • 100 pcs$0.56623
  • 500 pcs$0.44041
  • 1,000 pcs$0.34518

Nimewo Pati:
IRF640NLPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 200V 18A TO-262.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF640NLPBF Atribi pwodwi yo

Nimewo Pati : IRF640NLPBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 200V 18A TO-262
Seri : HEXFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 18A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 150 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 67nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1160pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 150W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-262
Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA