Toshiba Semiconductor and Storage - TPN4R303NL,L1Q

KEY Part #: K6416406

TPN4R303NL,L1Q Pricing (USD) [247410PC Stock]

  • 1 pcs$0.15701
  • 5,000 pcs$0.15623

Nimewo Pati:
TPN4R303NL,L1Q
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N-CH 30V 63A 8TSON.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage TPN4R303NL,L1Q electronic components. TPN4R303NL,L1Q can be shipped within 24 hours after order. If you have any demands for TPN4R303NL,L1Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPN4R303NL,L1Q Atribi pwodwi yo

Nimewo Pati : TPN4R303NL,L1Q
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N-CH 30V 63A 8TSON
Seri : U-MOSVIII-H
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 40A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 4.3 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 2.3V @ 200µA
Chaje Gate (Qg) (Max) @ Vgs : 14.8nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1400pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 700mW (Ta), 34W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-TSON Advance (3.3x3.3)
Pake / Ka : 8-PowerVDFN