Diodes Incorporated - ZXM62N03E6TA

KEY Part #: K6414997

[12562PC Stock]


    Nimewo Pati:
    ZXM62N03E6TA
    Manifakti:
    Diodes Incorporated
    Detaye deskripsyon:
    MOSFET N-CH 30V 3.2A SOT-23-6.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Arrays, Tiristors - TRIACs and Transistors - Bipolè (BJT) - RF ...
    Avantaj konpetitif:
    We specialize in Diodes Incorporated ZXM62N03E6TA electronic components. ZXM62N03E6TA can be shipped within 24 hours after order. If you have any demands for ZXM62N03E6TA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    ZXM62N03E6TA Atribi pwodwi yo

    Nimewo Pati : ZXM62N03E6TA
    Manifakti : Diodes Incorporated
    Deskripsyon : MOSFET N-CH 30V 3.2A SOT-23-6
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.2A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 110 mOhm @ 2.2A, 10V
    Vgs (th) (Max) @ Id : 1V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 9.6nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 380pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 1.1W (Ta)
    Operating Tanperati : -
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : SOT-23-6
    Pake / Ka : SOT-23-6