STI20N60M2-EP Pricing (USD) [72767PC Stock]
- 1 pcs$0.53734
- 1,000 pcs$0.48015
- Nimewo Pati:
- STI20N60M2-EP
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CHANNEL 600V 13A TO220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Arrays, Modil pouvwa chofè, Diodes - RF and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STI20N60M2-EP electronic components. STI20N60M2-EP can be shipped within 24 hours after order. If you have any demands for STI20N60M2-EP, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STI20N60M2-EP Atribi pwodwi yo
Nimewo Pati :
STI20N60M2-EP
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CHANNEL 600V 13A TO220
Seri :
MDmesh™ M2-EP
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
13A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
278 mOhm @ 6.5A, 10V
Vgs (th) (Max) @ Id :
4.75V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
21.7nC @ 10V
Vgs (Max) :
±25V
Antre kapasite (Ciss) (Max) @ Vds :
787pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
110W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220
Pake / Ka :
TO-220-3
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