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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FQD10N20TF

ON Semiconductor - FQD10N20TF

KEY Part #: K6410701

[14045PC Stock]

    Nimewo Pati:
    FQD10N20TF
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET N-CH 200V 7.6A DPAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Modil pouvwa chofè, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs and Transistors - IGBTs - Single ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor FQD10N20TF electronic components. FQD10N20TF can be shipped within 24 hours after order. If you have any demands for FQD10N20TF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FQD10N20TF Atribi pwodwi yo

    Nimewo Pati : FQD10N20TF
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET N-CH 200V 7.6A DPAK
    Seri : QFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 200V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7.6A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 360 mOhm @ 3.8A, 10V
    Vgs (th) (Max) @ Id : 5V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 18nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 670pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 2.5W (Ta), 51W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : D-Pak
    Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

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