Manifakti :
ON Semiconductor
Deskripsyon :
IC DRIVER GATE SINGLE IGBT 8SOIC
Kondwi konte genyen :
Low-Side
Kalite Gate :
IGBT, N-Channel MOSFET
Voltage - Pwovizyon pou :
11V ~ 20V
Vòltaj lojik - VIL, VIH :
1.2V, 3.2V
Kouran - Peak Sòti (Sous, Lavabo) :
1A, 2A
Segondè Voltage Side - Max (Bootstrap) :
-
Rise / Fall Time (Tip) :
17ns, 17ns
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SOIC