IXFX21N100F Pricing (USD) [4525PC Stock]
- 1 pcs$11.40645
- 10 pcs$10.55027
- 100 pcs$9.01035
- Nimewo Pati:
- IXFX21N100F
- Manifakti:
- IXYS-RF
- Detaye deskripsyon:
- MOSFET N-CH 1000V 21A PLUS247-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - Objektif espesyal, Transistors - IGBTs - Arrays, Diodes - Zener - Arrays, Tiristors - SCR - Modil yo, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in IXYS-RF IXFX21N100F electronic components. IXFX21N100F can be shipped within 24 hours after order. If you have any demands for IXFX21N100F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFX21N100F Atribi pwodwi yo
Nimewo Pati :
IXFX21N100F
Manifakti :
IXYS-RF
Deskripsyon :
MOSFET N-CH 1000V 21A PLUS247-3
Seri :
HiPerRF™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
21A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
500 mOhm @ 10.5A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs :
160nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
5500pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
500W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PLUS247™-3
Pake / Ka :
TO-247-3
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