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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. IXFX21N100F

IXYS-RF - IXFX21N100F

KEY Part #: K6397828

IXFX21N100F Pricing (USD) [4525PC Stock]

  • 1 pcs$11.40645
  • 10 pcs$10.55027
  • 100 pcs$9.01035
Nimewo Pati:
IXFX21N100F
Manifakti:
IXYS-RF
Detaye deskripsyon:
MOSFET N-CH 1000V 21A PLUS247-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Diodes - Zener - Arrays, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Single, Transistors - Pwogramasyon Unijunction, Transistors - JFETs, Diodes - Rèkteur - Single and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in IXYS-RF IXFX21N100F electronic components. IXFX21N100F can be shipped within 24 hours after order. If you have any demands for IXFX21N100F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFX21N100F Atribi pwodwi yo

Nimewo Pati : IXFX21N100F
Manifakti : IXYS-RF
Deskripsyon : MOSFET N-CH 1000V 21A PLUS247-3
Seri : HiPerRF™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 21A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 500 mOhm @ 10.5A, 10V
Vgs (th) (Max) @ Id : 5.5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs : 160nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 5500pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 500W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PLUS247™-3
Pake / Ka : TO-247-3

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