[1601PC Stock]
- Nimewo Pati:
- TPC6009-H(TE85L,FM
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 40V 5.3A VS6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Single, Diodes - Zener - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TPC6009-H(TE85L,FM electronic components. TPC6009-H(TE85L,FM can be shipped within 24 hours after order. If you have any demands for TPC6009-H(TE85L,FM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPC6009-H(TE85L,FM Atribi pwodwi yo
Nimewo Pati :
TPC6009-H(TE85L,FM
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 40V 5.3A VS6
Seri :
U-MOSVI-H
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
81 mOhm @ 2.7A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
4.7nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
290pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
700mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
VS-6 (2.9x2.8)
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
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