BSC123N10LSGATMA1 Pricing (USD) [116263PC Stock]
- 1 pcs$0.31813
- 5,000 pcs$0.30546
- Nimewo Pati:
- BSC123N10LSGATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 100V 71A TDSON-8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs, Tiristors - SCR, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal, Diodes - Rèkteur - Arrays and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSC123N10LSGATMA1 electronic components. BSC123N10LSGATMA1 can be shipped within 24 hours after order. If you have any demands for BSC123N10LSGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC123N10LSGATMA1 Atribi pwodwi yo
Nimewo Pati :
BSC123N10LSGATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 100V 71A TDSON-8
Seri :
OptiMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10.6A (Ta), 71A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
12.3 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 72µA
Chaje Gate (Qg) (Max) @ Vgs :
68nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
4900pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
114W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TDSON-8
Pake / Ka :
8-PowerTDFN
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