Transphorm - TPH3208LDG

KEY Part #: K6398492

TPH3208LDG Pricing (USD) [8238PC Stock]

  • 1 pcs$5.76876
  • 10 pcs$5.19189
  • 100 pcs$4.26888
  • 500 pcs$3.57663

Nimewo Pati:
TPH3208LDG
Manifakti:
Transphorm
Detaye deskripsyon:
GANFET N-CH 650V 20A PQFN.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single, Diodes - Zener - Single, Transistors - FETs, MOSFETs - RF, Tiristors - SCR - Modil yo, Diodes - RF, Tiristors - DIACs, SIDACs and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in Transphorm TPH3208LDG electronic components. TPH3208LDG can be shipped within 24 hours after order. If you have any demands for TPH3208LDG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPH3208LDG Atribi pwodwi yo

Nimewo Pati : TPH3208LDG
Manifakti : Transphorm
Deskripsyon : GANFET N-CH 650V 20A PQFN
Seri : -
Estati Pati : Not For New Designs
FET Kalite : N-Channel
Teknoloji : GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 20A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 130 mOhm @ 13A, 8V
Vgs (th) (Max) @ Id : 2.6V @ 300µA
Chaje Gate (Qg) (Max) @ Vgs : 14nC @ 8V
Vgs (Max) : ±18V
Antre kapasite (Ciss) (Max) @ Vds : 760pF @ 400V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 96W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 3-PQFN (8x8)
Pake / Ka : 3-PowerDFN