SQJQ100EL-T1_GE3 Pricing (USD) [59834PC Stock]
- 1 pcs$0.65349
- 2,000 pcs$0.55879
- Nimewo Pati:
- SQJQ100EL-T1_GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 40V 200A POWERPAK8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Diodes - RF and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SQJQ100EL-T1_GE3 electronic components. SQJQ100EL-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJQ100EL-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJQ100EL-T1_GE3 Atribi pwodwi yo
Nimewo Pati :
SQJQ100EL-T1_GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 40V 200A POWERPAK8
Seri :
Automotive, AEC-Q101, TrenchFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
200A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
1.2 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
220nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
14500pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
150W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerPAK® 8 x 8
Pake / Ka :
8-PowerTDFN
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