Taiwan Semiconductor Corporation - TSM033NB04CR RLG

KEY Part #: K6403434

TSM033NB04CR RLG Pricing (USD) [182316PC Stock]

  • 1 pcs$0.20288

Nimewo Pati:
TSM033NB04CR RLG
Manifakti:
Taiwan Semiconductor Corporation
Detaye deskripsyon:
MOSFET SINGLE N-CHANNEL TRENCH.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Arrays, Diodes - Bridge rèktifikateur, Modil pouvwa chofè, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays and Tiristors - SCR ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TSM033NB04CR RLG Atribi pwodwi yo

Nimewo Pati : TSM033NB04CR RLG
Manifakti : Taiwan Semiconductor Corporation
Deskripsyon : MOSFET SINGLE N-CHANNEL TRENCH
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 21A (Ta), 121A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 3.3 mOhm @ 21A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 77nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 5022pF @ 20V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.1W (Ta), 107W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-PDFN (5x6)
Pake / Ka : 8-PowerTDFN