Diodes Incorporated - ZVN4306GTA

KEY Part #: K6416007

ZVN4306GTA Pricing (USD) [141698PC Stock]

  • 1 pcs$0.26234
  • 1,000 pcs$0.26103

Nimewo Pati:
ZVN4306GTA
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N-CH 60V 2.1A SOT223.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - Pwogramasyon Unijunction, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Arrays and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in Diodes Incorporated ZVN4306GTA electronic components. ZVN4306GTA can be shipped within 24 hours after order. If you have any demands for ZVN4306GTA, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ZVN4306GTA Atribi pwodwi yo

Nimewo Pati : ZVN4306GTA
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N-CH 60V 2.1A SOT223
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.1A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V
RD sou (Max) @ Id, Vgs : 330 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id : 3V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 350pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-223
Pake / Ka : TO-261-4, TO-261AA

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