Nimewo Pati :
DMT10H009LSS-13
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET BVDSS 61V-100V SO-8 TR
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
13A (Ta), 48A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
9 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
40.2nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
2309pF @ 50V
Disipasyon Pouvwa (Max) :
1.8W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SO
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)