Microchip Technology - 2N7008-G

KEY Part #: K6398034

2N7008-G Pricing (USD) [179848PC Stock]

  • 1 pcs$0.20961
  • 25 pcs$0.17449
  • 100 pcs$0.15780

Nimewo Pati:
2N7008-G
Manifakti:
Microchip Technology
Detaye deskripsyon:
MOSFET N-CH 60V 0.23A TO92-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modil yo, Transistors - JFETs, Diodes - RF, Transistors - Bipolè (BJT) - RF, Modil pouvwa chofè and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
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ISO-9001-2015
ISO-13485
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ISO-28000-2007
ISO-45001-2018

2N7008-G Atribi pwodwi yo

Nimewo Pati : 2N7008-G
Manifakti : Microchip Technology
Deskripsyon : MOSFET N-CH 60V 0.23A TO92-3
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 230mA (Tj)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V
RD sou (Max) @ Id, Vgs : 7.5 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 50pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-92-3
Pake / Ka : TO-226-3, TO-92-3 (TO-226AA)
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