Nimewo Pati :
SSM6J216FE,LF
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET P-CHANNEL 12V 4.8A ES6
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.5V, 4.5V
RD sou (Max) @ Id, Vgs :
32 mOhm @ 3.5A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
12.7nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
1040pF @ 12V
Disipasyon Pouvwa (Max) :
700mW (Ta)
Operating Tanperati :
150°C
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
ES6
Pake / Ka :
SOT-563, SOT-666