Manifakti :
ON Semiconductor
Deskripsyon :
650V 10A SIC SBD
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
650V
Kouran - Mwayèn Rèktifye (Io) :
18A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.75V @ 10A
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
200µA @ 650V
Kapasite @ Vr, F :
575pF @ 1V, 100kHz
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè :
D-PAK (TO-252)
Operating Tanperati - Junction :
-55°C ~ 175°C