US1JHE3_A/H Pricing (USD) [636328PC Stock]
- 1 pcs$0.05813
- 1,800 pcs$0.05412
- 3,600 pcs$0.04961
- 5,400 pcs$0.04660
- 12,600 pcs$0.04360
- 45,000 pcs$0.04009
- Nimewo Pati:
- US1JHE3_A/H
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 600V 1A DO214AC. Rectifiers 600 Volt 1.0A 75ns 30 Amp IFSM
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Tiristors - TRIACs, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Arrays and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division US1JHE3_A/H electronic components. US1JHE3_A/H can be shipped within 24 hours after order. If you have any demands for US1JHE3_A/H, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
US1JHE3_A/H Atribi pwodwi yo
Nimewo Pati :
US1JHE3_A/H
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 600V 1A DO214AC
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
1.7V @ 1A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
75ns
Kouran - Fèy Reverse @ Vr :
10µA @ 600V
Kapasite @ Vr, F :
10pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-214AC, SMA
Pake Aparèy Founisè :
DO-214AC (SMA)
Operating Tanperati - Junction :
-55°C ~ 150°C
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