ON Semiconductor - RHRD660S9A

KEY Part #: K6452560

RHRD660S9A Pricing (USD) [187337PC Stock]

  • 1 pcs$0.19842
  • 2,500 pcs$0.19744
  • 5,000 pcs$0.18804

Nimewo Pati:
RHRD660S9A
Manifakti:
ON Semiconductor
Detaye deskripsyon:
DIODE GEN PURP 600V 6A TO252-3. Diodes - General Purpose, Power, Switching 6A 600V HyperFast Diode
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in ON Semiconductor RHRD660S9A electronic components. RHRD660S9A can be shipped within 24 hours after order. If you have any demands for RHRD660S9A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RHRD660S9A Atribi pwodwi yo

Nimewo Pati : RHRD660S9A
Manifakti : ON Semiconductor
Deskripsyon : DIODE GEN PURP 600V 6A TO252-3
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 6A
Voltage - Forward (Vf) (Max) @ Si : 2.1V @ 6A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 35ns
Kouran - Fèy Reverse @ Vr : 100µA @ 600V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè : TO-252AA
Operating Tanperati - Junction : -55°C ~ 175°C

Ou ka enterese tou
  • RHRD660S9A

    ON Semiconductor

    DIODE GEN PURP 600V 6A TO252-3. Diodes - General Purpose, Power, Switching 6A 600V HyperFast Diode

  • C3D02065E

    Cree/Wolfspeed

    DIODE SCHOTTKY 650V 2A TO252-2. Schottky Diodes & Rectifiers Schottky Diode 2A, 650V

  • V10WL45-M3/I

    Vishay Semiconductor Diodes Division

    DIODE SCHOTTKY 10A 45V DPAK.

  • BYM10-600-E3/97

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 1A DO213AB. Rectifiers 600 Volt 1.0 Amp Glass Passivated

  • BYM11-1000-E3/97

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 1KV 1A DO213AB. Rectifiers 1000 Volt 1.0A 500ns Glass Passivated

  • RGL34A-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 50V 500MA DO213AA. Diodes - General Purpose, Power, Switching 50 Volt 0.5A 150ns 10 Amp IFSM