Vishay Semiconductor Diodes Division - V10150S-E3/4W

KEY Part #: K6443429

V10150S-E3/4W Pricing (USD) [79254PC Stock]

  • 1 pcs$0.49336
  • 1,000 pcs$0.20774

Nimewo Pati:
V10150S-E3/4W
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE SCHOTTKY 150V 10A TO220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Arrays, Modil pouvwa chofè, Transistors - Pwogramasyon Unijunction, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - RF and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division V10150S-E3/4W electronic components. V10150S-E3/4W can be shipped within 24 hours after order. If you have any demands for V10150S-E3/4W, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

V10150S-E3/4W Atribi pwodwi yo

Nimewo Pati : V10150S-E3/4W
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE SCHOTTKY 150V 10A TO220AB
Seri : TMBS®
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 150V
Kouran - Mwayèn Rèktifye (Io) : 10A
Voltage - Forward (Vf) (Max) @ Si : 1.2V @ 10A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 150µA @ 150V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : TO-220-3
Pake Aparèy Founisè : TO-220AB
Operating Tanperati - Junction : -55°C ~ 150°C

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