Vishay Semiconductor Diodes Division - RGL41GHE3/97

KEY Part #: K6439419

RGL41GHE3/97 Pricing (USD) [765063PC Stock]

  • 1 pcs$0.05102
  • 10,000 pcs$0.05076

Nimewo Pati:
RGL41GHE3/97
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 400V 1A DO213AB. Rectifiers 1 Amp 400 Volt 150ns
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tiristors - TRIACs, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Diodes - Rèkteur - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Arrays and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division RGL41GHE3/97 electronic components. RGL41GHE3/97 can be shipped within 24 hours after order. If you have any demands for RGL41GHE3/97, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RGL41GHE3/97 Atribi pwodwi yo

Nimewo Pati : RGL41GHE3/97
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 400V 1A DO213AB
Seri : SUPERECTIFIER®
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 400V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 1.3V @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 150ns
Kouran - Fèy Reverse @ Vr : 5µA @ 400V
Kapasite @ Vr, F : 15pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-213AB, MELF (Glass)
Pake Aparèy Founisè : DO-213AB
Operating Tanperati - Junction : -65°C ~ 175°C

Ou ka enterese tou
  • DPG10IM300UC

    IXYS

    DIODE GEN PURP 300V 10A TO252. Diodes - General Purpose, Power, Switching 10 Amps 300V

  • DSS6-0025BS

    IXYS

    DIODE SCHOTTKY 25V 6A TO252AA. Schottky Diodes & Rectifiers 6 Amps 25V

  • DSEP6-06BS

    IXYS

    DIODE GEN PURP 600V 6A TO252AA. Rectifiers 6 Amps 600V

  • DLA10IM800UC

    IXYS

    DIODE GEN PURP 800V 10A TO252. Rectifiers 10 Amps 800V

  • APT30DQ120KG

    Microsemi Corporation

    DIODE GEN PURP 1.2KV 30A TO220. Diodes - General Purpose, Power, Switching FG, FRED, 1200V,TO-220, RoHS

  • S1FLK-GS18

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 800V 1A DO219AB. Rectifiers GENPURP SWITCHING DIODESMFDO219ECO-e3