Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 800V 1A DO219AB
Voltage - DC Ranvèse (Vr) (Max) :
800V
Kouran - Mwayèn Rèktifye (Io) :
700mA
Voltage - Forward (Vf) (Max) @ Si :
1.1V @ 1A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
1.8µs
Kouran - Fèy Reverse @ Vr :
10µA @ 800V
Kapasite @ Vr, F :
4pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DO-219AB (SMF)
Operating Tanperati - Junction :
-55°C ~ 150°C