Vishay Semiconductor Diodes Division - VS-31DQ09TR

KEY Part #: K6451247

[7111PC Stock]


    Nimewo Pati:
    VS-31DQ09TR
    Manifakti:
    Vishay Semiconductor Diodes Division
    Detaye deskripsyon:
    DIODE SCHOTTKY 90V 3.3A C16.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Single, Tiristors - DIACs, SIDACs, Transistors - Objektif espesyal, Tiristors - TRIACs, Diodes - Zener - Single and Transistors - JFETs ...
    Avantaj konpetitif:
    We specialize in Vishay Semiconductor Diodes Division VS-31DQ09TR electronic components. VS-31DQ09TR can be shipped within 24 hours after order. If you have any demands for VS-31DQ09TR, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    VS-31DQ09TR Atribi pwodwi yo

    Nimewo Pati : VS-31DQ09TR
    Manifakti : Vishay Semiconductor Diodes Division
    Deskripsyon : DIODE SCHOTTKY 90V 3.3A C16
    Seri : -
    Estati Pati : Obsolete
    Kalite dyòd : Schottky
    Voltage - DC Ranvèse (Vr) (Max) : 90V
    Kouran - Mwayèn Rèktifye (Io) : 3.3A
    Voltage - Forward (Vf) (Max) @ Si : 850mV @ 3A
    Vitès : Fast Recovery =< 500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : -
    Kouran - Fèy Reverse @ Vr : 1mA @ 90V
    Kapasite @ Vr, F : -
    Mounting Kalite : Through Hole
    Pake / Ka : C-16, Axial
    Pake Aparèy Founisè : C-16
    Operating Tanperati - Junction : -40°C ~ 150°C

    Ou ka enterese tou
    • MA3XD1100L

      Panasonic Electronic Components

      DIODE SCHOTTKY 20V 1A MINI3.

    • 8EWS10STRL

      Vishay Semiconductor Diodes Division

      DIODE GEN PURP 1KV 8A DPAK.

    • 8EWS12STRL

      Vishay Semiconductor Diodes Division

      DIODE GEN PURP 1.2KV 8A DPAK.

    • 8EWS10S

      Vishay Semiconductor Diodes Division

      DIODE GEN PURP 1KV 8A DPAK.

    • 8EWS08STRL

      Vishay Semiconductor Diodes Division

      DIODE GEN PURP 800V 8A DPAK.

    • 8EWS08STR

      Vishay Semiconductor Diodes Division

      DIODE GEN PURP 800V 8A DPAK.