Infineon Technologies - IPZA60R120P7XKSA1

KEY Part #: K6398275

IPZA60R120P7XKSA1 Pricing (USD) [16942PC Stock]

  • 1 pcs$2.43266

Nimewo Pati:
IPZA60R120P7XKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET TO247-4.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Pwogramasyon Unijunction, Tiristors - SCR, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF and Tiristors - TRIACs ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPZA60R120P7XKSA1 Atribi pwodwi yo

Nimewo Pati : IPZA60R120P7XKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET TO247-4
Seri : CoolMOS™ P7
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 26A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 120 mOhm @ 8.2A, 10V
Vgs (th) (Max) @ Id : 4V @ 410µA
Chaje Gate (Qg) (Max) @ Vgs : 36nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1544pF @ 400V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 95W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO247-4
Pake / Ka : TO-247-4