Nimewo Pati :
IDB09E60ATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
DIODE GEN PURP 600V 19.3A TO263
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
19.3A (DC)
Voltage - Forward (Vf) (Max) @ Si :
2V @ 9A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
75ns
Kouran - Fèy Reverse @ Vr :
50µA @ 600V
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
PG-TO263-3
Operating Tanperati - Junction :
-55°C ~ 175°C