Nimewo Pati :
SIDC09D60E6X1SA1
Manifakti :
Infineon Technologies
Deskripsyon :
DIODE GEN PURP 600V 20A WAFER
Estati Pati :
Discontinued at Digi-Key
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
20A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.7V @ 20A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
150ns
Kouran - Fèy Reverse @ Vr :
27µA @ 600V
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Sawn on foil
Operating Tanperati - Junction :
-55°C ~ 150°C